Wedbush Securities Inc. lowered its stake in shares of Roundhill Memory ETF (BATS:DRAM – Free Report) by 37.7% during the third quarter, according to the company in its most recent disclosure with the Securities and Exchange Commission. The institutional investor owned 24,319 shares of the ETF’s stock after selling 14,740 shares during the quarter. Wedbush Securities Inc.’s holdings in Roundhill Memory ETF were worth $1,468,000 as of its most recent filing with the Securities and Exchange Commission.
Several other institutional investors have also modified their holdings of the stock. Bouchey Financial Group Ltd. acquired a new position in shares of Roundhill Memory ETF in the 2nd quarter valued at $34,615,000. Oak Grove Capital LLC grew its position in shares of Roundhill Memory ETF by 32.3% in the 3rd quarter. Oak Grove Capital LLC now owns 335,950 shares of the ETF’s stock valued at $20,278,000 after buying an additional 82,050 shares during the last quarter. CoreCap Advisors LLC purchased a new position in shares of Roundhill Memory ETF in the 3rd quarter valued at $14,827,000. Halter Ferguson Financial Inc. acquired a new stake in Roundhill Memory ETF during the 3rd quarter worth $13,473,000. Finally, Members Advisory Group LLC acquired a new stake in Roundhill Memory ETF during the 2nd quarter worth $13,919,000.
Roundhill Memory ETF Stock Performance
Shares of BATS:DRAM opened at $47.06 on Monday. Roundhill Memory ETF has a 12 month low of $26.14 and a 12 month high of $81.34. The stock’s fifty day moving average is $56.67.
Roundhill Memory ETF (BATS: DRAM) is an exchange-traded fund offered by Roundhill Investments that provides targeted exposure to the memory semiconductor industry. Listed on the Cboe BZX Exchange under the ticker DRAM, the fund is intended to give investors access to companies whose primary business activities are connected to memory chips and related technologies.
The fund focuses on firms operating across the memory semiconductor supply chain, including companies involved in design and development of DRAM and NAND memory, wafer fabrication, packaging and testing, and the manufacture of semiconductor capital equipment and materials.
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