Yarbrough Capital LLC bought a new position in shares of Roundhill Memory ETF (BATS:DRAM – Free Report) in the third quarter, according to the company in its most recent 13F filing with the Securities and Exchange Commission (SEC). The fund bought 92,506 shares of the ETF’s stock, valued at approximately $5,584,000.
Several other institutional investors and hedge funds also recently modified their holdings of DRAM. SteelPeak Wealth LLC acquired a new stake in shares of Roundhill Memory ETF in the third quarter valued at approximately $1,697,000. TD Waterhouse Canada Inc. increased its stake in shares of Roundhill Memory ETF by 1,033.9% during the 3rd quarter. TD Waterhouse Canada Inc. now owns 32,123 shares of the ETF’s stock worth $1,994,000 after purchasing an additional 29,290 shares in the last quarter. Quattro Financial Advisors LLC acquired a new position in shares of Roundhill Memory ETF during the 3rd quarter worth approximately $1,834,000. NFSG Corp acquired a new position in shares of Roundhill Memory ETF during the 3rd quarter worth approximately $1,400,000. Finally, Activest Wealth Management acquired a new position in shares of Roundhill Memory ETF during the 3rd quarter worth approximately $6,140,000.
Roundhill Memory ETF Stock Performance
DRAM stock traded up $1.88 on Monday, reaching $48.33. The company had a trading volume of 30,281,936 shares, compared to its average volume of 42,389,316. Roundhill Memory ETF has a 1 year low of $26.14 and a 1 year high of $81.34. The firm’s fifty day moving average price is $57.28.
Roundhill Memory ETF (BATS: DRAM) is an exchange-traded fund offered by Roundhill Investments that provides targeted exposure to the memory semiconductor industry. Listed on the Cboe BZX Exchange under the ticker DRAM, the fund is intended to give investors access to companies whose primary business activities are connected to memory chips and related technologies.
The fund focuses on firms operating across the memory semiconductor supply chain, including companies involved in design and development of DRAM and NAND memory, wafer fabrication, packaging and testing, and the manufacture of semiconductor capital equipment and materials.
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